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Freescale Semiconductor Technical Data
Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
MW4IC001MR4 Rev. 4, 5/2006
RF LDMOS Wideband Integrated Power Amplifier
The MW4IC001M wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP Power Gain -- 13 dB Efficiency -- 38% * High Gain, High Efficiency and High Linearity * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case @ 85C Symbol RJC Value 27.3 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 0 (Minimum) M1 (Minimum) C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved. MW4IC001MR4
12
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 V, ID = 50 A) Gate Quiescent Voltage (VDS = 28 V, ID = 10 mA) VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.7 0.48 0.05 5 5 0.9 -- Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 10 1 Adc Adc Adc Symbol Min Typ Max Unit
ARCHIVE INFORMATION
Forward Transconductance (VDS = 10 V, ID = 0.1 A) Dynamic Characteristics Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W PEP, IDQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 12 mA, f = 2170 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 0.9 W CW, IDQ = 12 mA, f = 2170 MHz)
S
Coss Crss
-- --
45 0.62
-- --
pF pF
Gps
--
13
--
dB
D
--
29
--
%
IMD
--
- 28
--
dBc
IRL
--
- 18
--
dB
P1dB Gps D IRL
-- 12 35 - 10
0.85 13 38 - 16
-- -- -- --
W dB % dB
MW4IC001MR4 RF Device Data Freescale Semiconductor 13
ARCHIVE INFORMATION
Drain- Source On - Voltage (VGS = 10 V, ID = 0.05 A)
Vdc
VGG C1 C2 Z6 Z7 R1 RF INPUT DUT Z8 L2 Z9 Z10 Z11 C5 C11 Z12 C12 Z13 C13 RF OUTPUT + VDD C8
C7
C6
Z1 C9 C10 C3
Z2 L1
Z3
Z4
R2 C4
Z5
ARCHIVE INFORMATION
Figure 1. MW4IC001MR4 900 MHz Test Circuit Schematic Table 6. MW4IC001MR4 900 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C3, C5, C7 C4 C8 C9 C10, C11 C12 C13 L1 L2 R1 R2 Description 0.1 F, 100 V Chip Capacitors 43 pF, 500 V Chip Capacitors 12 pF, 500 V Chip Capacitor 22 F, 35 V Tantalum Chip Capacitor 4.7 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitors 2.7 pF, 500 V Chip Capacitor 3.3 pF, 500 V Chip Capacitor 5.6 nH Chip Inductor 10 nH Chip Inductor 100 W Chip Resistor 20 W Chip Resistor Part Number C1210C104K5RACTR 100B430JP500X 100B120JP500X T491X226K035AS 100B4R7CP500X 27271SL 100B2R7CP500X 100B3R3CP500X 0805 Series 1008 Series CRCW12061001F100 CRCW120620R0F100 Manufacturer Kemet ATC ATC Kemet ATC Johanson ATC ATC AVX ATC Dale Dale
MW4IC001MR4 14 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8
1.331 0.126 0.065 0.065 0.680 1.915 0.120
x 0.044 x 0.076 x 0.175 x 0.195 x 0.145 x 0.055 x 0.141
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 PCB
0.062 x 0.044 to 0.615 Taper 0.082 x 0.615 Microstrip 0.075 x 0.044 Microstrip 0.625 x 0.044 Microstrip 1.375 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
VGG C1 C2 C6
V DD C8 C7
C9 C10
C3
R1 C4 L1 R2 L2 C5
C12 C11 C13
ARCHIVE INFORMATION
MW4IC001MR4 900 MHz Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MW4IC001MR4 900 MHz Test Circuit Component Layout
MW4IC001MR4 RF Device Data Freescale Semiconductor 15
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS - 900 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL D VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two -Tone Measurement 100 kHz Tone Spacing IM3 Gps 860 865 870 875 880 885 890 895 900 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 46 42 38 34 30 26 22 18 14 10 855 -15 -17 -19 -21 -23 -25 -27 -29 -31 -33 -35 905
ARCHIVE INFORMATION
f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus Frequency
15 14 13 12 11 10 9 8 7 6 0
IMD, INTERMODULATION DISTORTION (dBc)
Gps
D
60 55 50 D, DRAIN EFFICIENCY (%)
-25 -30 -35 -40 -45 -50 -55 VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz
G ps , POWER GAIN (dB)
IDQ = 8 mA 10 mA 18 mA
P1dB
45 40 35 30
16 mA
VDS = 28 Vdc IDQ = 14 mA f = 880 MHz 0.2 0.4 0.6 0.8 1.0 1.2
25 20 15 1.4
14 mA Two -Tone Measurement 100 kHz Tone Spacing 12 mA 0.01 0.1 1 Pout, OUTPUT POWER (WATTS) PEP
10
Pout, OUTPUT POWER (WATTS)
Figure 4. CW Performance versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0.01 5th Order 7th Order 0.1 Two -Tone Measurement 100 kHz Tone Spacing 1 10 3rd Order VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz f2 = 880.1 MHz IMD, INTERMODULATION DISTORTION (dBc)
-25 -30 -35 -40 10 MHz -45 -50 0.01 1 MHz Tone Spacing = 100 kHz 0.1
IMD, INTERMODULATION DISTORTION (dBc)
VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two -Tone Measurement 1 10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products versus Output Power MW4IC001MR4 16
Figure 7. Third Order Intermodulation Distortion versus Output Power
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
VGG
Z5 + Z12 C1 C2 Z4 Z11 R1 RF INPUT DUT Z8 Z9 Z10 Z13 Z14 C5 Z15 RF OUTPUT C4 + C6 VDD
Z1 C3
Z2
Z3
Z6
Z7
C7
ARCHIVE INFORMATION
Figure 8. MW4IC001MR4 1990 MHz Test Circuit Schematic Table 7. MW4IC001MR4 1990 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C3 C4
VDD
C6
C5
C7
MW4IC001MR4 1990 MHz Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 9. MW4IC001MR4 1990 MHz Test Circuit Component Layout MW4IC001MR4 RF Device Data Freescale Semiconductor 17
ARCHIVE INFORMATION
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.018 0.495 0.893 1.340 0.912 0.241 0.076 0.294
x 0.044 x 0.296 x 0.500 x 0.022 x 0.022 x 0.500 x 0.150 x 0.150
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.067 x 0.264 Microstrip 0.457 x 0.492 Microstrip 0.719 x 0.022 Microstrip 1.149 x 0.022 Microstrip 0.677 x 0.434 Microstrip 0.095 x 0.264 Microstrip 0.772 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
TYPICAL CHARACTERISTICS - 1990 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IRL D IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 1930 1940 1950 1960 1970 1980 Gps IMD VDD = 28 Vdc, Pout = 0.9 W (PEP), IDQ = 12 mA Two-Tone Measurement, 100 kHz Tone Spacing -11 -14 -17 -20 -23 -26 -29 -32 -35 1990
ARCHIVE INFORMATION
f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus Frequency
Gps
IMD, INTERMODULATION DISTORTION (dBc)
14.4
56 48 40 32 24 16 1.1 1.2 1.3
-30 -35 -40 -45 16 mA -50 -55 -60 9.6 mA 0.01 12 mA IDQ = 20 mA
13.6
13.2
P1dB VDD = 28 Vdc IDQ = 12 mA f = 1990 MHz 0.4 0.5 0.6 0.7 0.8 0.9 1.0
D, DRAIN EFFICIENCY (%)
14.0
12.8 D 0.2 0.3 12.4 0.1
VDD = 28 Vdc f1 = 1990 MHz, f2 = 1990.1 MHz Two -Tone Measurement 100 kHz Tone Spacing 0.1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. CW Performance versus Output Power
Figure 12. Intermodulation Distortion versus Output Power
-35 -40 -45 -50 -55 -60 -65 -70 -75 7th Order VDD = 28 Vdc IDQ = 12 mA, f1 = 1990 MHz, f2 = 1990.1 MHz Two-Tone Measurement, 100 kHz Tone Spacing 0.1 OUTPUT POWER (WATTS) PEP 1 3rd Order 5th Order
IMD, THIRD ORDER INTERMODULATION (dBc)
-30
-30 -35 -40 10 MHz -45 -50 -55 -60 100 kHz 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1 MHz VDD = 28 Vdc IDQ = 12 mA f1 = 1990 MHz f2 = f1 + Tone Spacing Two -Tone Measurement
IMD, INTERMODULATION DISTORTION (dBc)
0.01
Figure 13. Intermodulation Distortion Products versus Output Power MW4IC001MR4 18
Figure 14. Third Order Intermodulation Distortion versus Output Power
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
1 1
G ps , POWER GAIN (dB)
VGG
Z5 + Z12 C1 C2 Z4 Z11 R1 RF INPUT DUT Z8 Z9 Z10 Z13 Z14 C5 Z15 RF OUTPUT C4 + C6 VDD
Z1 C3
Z2
Z3
Z6
Z7
C7
ARCHIVE INFORMATION
Figure 15. MW4IC001MR4 2170 MHz Test Circuit Schematic Table 8. MW4IC001MR4 2170 MHz Test Circuit Component Designations and Values
Part C1, C6 C2, C4 C3, C5 C7 R1 Description 22 F, 35 V Tantalum Capacitors 10 pF, 500 V Chip Capacitors 10 pF, 500 V Chip Capacitor 0.6 - 4.5 pF, 500 V Variable Capacitor 1 kW Chip Resistor Part Number T491X226K035AS 100B100JCA500X 600S100JW 27271SL CRCW12061021F100 Manufacturer Kemet ATC ATC Johanson Dale
VGG
C1 C2 R1 C4
VDD
C6
C5 C3 C7
MW4IC001MR4 2170 MHz Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 16. MW4IC001MR4 2170 MHz Test Circuit Component Layout MW4IC001MR4 RF Device Data Freescale Semiconductor 19
ARCHIVE INFORMATION
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
1.267 0.058 0.758 1.073 1.361 0.205 0.109 0.210
x 0.044 x 0.044 x 0.256 x 0.022 x 0.022 x 0.332 x 0.150 x 0.150
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.106 x 0.344 Microstrip 0.783 x 0.500 Microstrip 0.847 x 0.022 Microstrip 1.055 x 0.022 Microstrip 0.291 x 0.387 Microstrip 0.050 x 0.287 Microstrip 0.950 x 0.044 Microstrip Rogers RO4350, 0.020, r = 3.5
TYPICAL CHARACTERISTICS - 2170 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IRL D VDD = 28 Vdc Pout = 0.9 W (PEP) IDQ = 12 mA Two-Tone Measurement, 100 kHz Tone Spacing
27
-18
22
-23
17
IMD Gps
-28
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
32
-13
12 2110
2120
2130
2140
2150
2160
-33 2170
f, FREQUENCY (MHz)
Figure 17. Two-Tone Performance versus Frequency
13.8 13.4 13.0 12.6 12.2 11.8 11.4 D P1dB VDD = 28 Vdc IDQ = 12mA f = 2170 MHz Gps 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 16 mA
G ps , POWER GAIN (dB)
VDD = 28 Vdc f1 = 2170 MHz, f2 = 2170.1 MHz Two-Tone Measurement 100 kHz Tone Spacing IDQ = 7.2 mA 20 mA
9.6 mA 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Pout, OUTPUT POWER (WATTS) PEP
12 mA 0.1 1
Pout, OUTPUT POWER (WATTS) PEP
Figure 18. CW Performance versus Output Power
-20 -25 -30 -35
Figure 19. Intermodulation Distortion versus Output Power
IMD,THIRD ORDER INTERMODULATION (dBc)
-20 IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 -65 -70
VDD = 28 Vdc, IDQ = 12 mA, f1 = 2170 MHz, f2 = 2170.1 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order
VDD = 28 Vdc IDQ = 12 mA f1 = 2170 MHz f2 = f1 + Tone Spacing Two -Tone Measurement
5th Order
1 MHz
10 MHz
7th Order 0.01 0.1 Pout, OUTPUT POWER (WATTS) PEP 1
-40 -45 0.01 100 kHz 0.1 Pout, OUTPUT POWER (WATTS) PEP 1
Figure 20. Intermodulation Distortion Products versus Output Power MW4IC001MR4 20
Figure 21. Third Order Intermodulation Distortion versus Output Power
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
f = 860 MHz Zload f = 900 MHz
ARCHIVE INFORMATION
Zo = 50
f =860 MHz
Zsource
f = 900 MHz
VDD = 28 V, IDQ = 14 mA, Pout = 0.9 W PEP f MHz 860 865 870 875 880 885 890 895 900 Zsource 27.853 + j5.908 28.617 + j6.078 29.458 + j6.285 30.306 + j6.422 31.223 + j6.567 32.194 + j6.660 33.228 + j6.656 34.293 + j6.624 35.424 + j6.508 Zload 15.492 + j63.669 15.592 + j68.687 15.788 + j69.799 15.835 + j70.863 15.975 + j71.920 16.094 + j73.091 16.286 + j74.159 16.344 + j75.236 16.628 + j76.283
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance MW4IC001MR4 RF Device Data Freescale Semiconductor 21
ARCHIVE INFORMATION
f = 1920 MHz
Zload f = 2000 MHz
f = 2180 MHz f = 2100 MHz Zload f = 2180 MHz f = 2100 MHz
f = 2000 MHz f = 1920 MHz Zsource
Zsource Zo = 50
ARCHIVE INFORMATION
Zo = 50
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz 1920 1930 1940 1950 1960 1970 1980 1990 2000 Zsource 4.238 + j15.142 4.322 + j15.362 4.490 + j15.466 4.605 + j15.711 4.752 + j15.904 4.905 + j16.050 5.071 + j16.236 5.262 + j16.446 5.487 + j16.632 Zload 7.764 + j28.829 8.056 + j29.352 8.436 + j29.727 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 10.030 + j31.690 10.546 + j32.237 11.054 + j32.726 f MHz 2100 2110 2120 2130 2140 2150 2160 2170 2180
VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP Zsource 2.667 + j12.903 2.671 + j13.070 2.664 + j13.224 2.694 + j13.431 2.703 + j13.511 2.702 + j13.700 2.745 + j13.952 2.754 + j14.026 2.784 + j14.206 Zload 5.892 + j26.374 6.092 + j26.739 6.281 + j27.094 6.540 + j27.510 6.748 + j27.795 6.996 + j28.182 7.300 + j28.678 7.562 + j28.987 7.862 + j29.411
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Z
source
Z
load
Figure 23. Series Equivalent Source and Load Impedance MW4IC001MR4 22 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
NOTES
ARCHIVE INFORMATION
MW4IC001MR4 RF Device Data Freescale Semiconductor 23
ARCHIVE INFORMATION
NOTES
ARCHIVE INFORMATION
MW4IC001MR4 24 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
NOTES
ARCHIVE INFORMATION
MW4IC001MR4 RF Device Data Freescale Semiconductor 25
ARCHIVE INFORMATION
PACKAGE DIMENSIONS
A F
3
B
D
1
2
R
L
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X.
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _
U H
4
10_DRAFT
P C
Y
Y
E
ZONE W
1
2
3
G
S
STYLE 1: PIN 1. 2. 3. 4.
DRAIN GATE SOURCE SOURCE
ZONE X
VIEW Y - Y
CASE 466 - 03 ISSUE C PLD- 1.5 PLASTIC
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010
MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
MW4IC001MR4 26 RF Device Data Freescale Semiconductor
EEE E EEEEEE E EEEEEE E EEEEEE E EEEEEE EEEE
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Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MW4IC001MR4
MW4IC001MR4 Data RF Device Rev. 4, 5/2006 Freescale Semiconductor
27

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